Transcription
BGS22WL10DPDT (Dual-Pole / Double-Throw) Differential RF SwitchData SheetRevision 1.7 - June 1, 2015Power Management & Multimarket
Edition June 1, 2015Published byInfineon Technologies AG81726 Munich, Germanyc 2011 Infineon Technologies AGAll Rights Reserved.Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.With respect to any examples or hints given herein, any typical values stated herein and/or any information regardingthe application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,including without limitation, warranties of non-infringement of intellectual property rights of any third party.InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest InfineonTechnologies Office (www.infineon.com).WarningsDue to technical requirements, components may contain dangerous substances. For information on the types inquestion, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express writtenapproval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure ofthat life-support device or system or to affect the safety or effectiveness of that device or system. Life support devicesor systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protecthuman life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS22WL10Revision HistoryPrevious Version: v1.6, May 27, 2014PageSubjects (major changes since last revision)9Updated Maximum Ratings (Table 3)Trademarks of Infineon Technologies AGAURIXTM , BlueMoonTM , COMNEONTM , C166TM , CROSSAVETM , CanPAKTM , CIPOSTM , CoolMOSTM , CoolSETTM ,CORECONTROLTM , DAVETM , EasyPIMTM , EconoBRIDGETM , EconoDUALTM , EconoPACKTM , EconoPIMTM , EiceDRIVERTM ,EUPECTM , FCOSTM , HITFETTM , HybridPACKTM , ISOFACETM , I2 RFTM , IsoPACKTM , MIPAQTM , ModSTACKTM , my-dTM ,NovalithICTM , OmniTuneTM , OptiMOSTM , ORIGATM , PROFETTM , PRO-SILTM , PRIMARIONTM , PrimePACKTM , RASICTM ,ReverSaveTM , SatRICTM , SIEGETTM , SINDRIONTM , SMARTiTM , SmartLEWISTM , TEMPFETTM , thinQ!TM , TriCoreTM ,TRENCHSTOPTM , X-GOLDTM , XMMTM , X-PMUTM , XPOSYSTM .Other TrademarksAdvance Design SystemTM (ADS) of Agilent Technologies, AMBATM , ARMTM , MULTI-ICETM , PRIMECELLTM , REALVIEWTM ,THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of BluetoothSIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM , FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (VisaHoldings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium.HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared DataAssociation Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM , NUCLEUSTM of Mentor Graphics Corporation. MifareTM ofNXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTMOpenwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc.SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYOYUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKIKAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM , PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM ofTexas Instruments Incorporated. VXWORKSTM , WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes ZetexLimited.Last Trademarks Update 2010-06-09Data Sheet3Revision 1.7 - June 1, 2015
BGS22WL10Contents1 Features72 Product Description73 Maximum Ratings94 Operation Ranges95 RF Characteristics106 Package Outline and Pin Configuration11Data Sheet4Revision 1.7 - June 1, 2015
BGS22WL10List of Figures12345BGS22WL10 block diagram . . . . . . . . . . . . . . . .Marking Layout (top view) . . . . . . . . . . . . . . . . .TSLP-10-1 Package Outline (top, side and bottom view)Footprint TSLP-10-1 . . . . . . . . . . . . . . . . . . . .Tape and Reel Dimensions for TSLP-10-1 . . . . . . . .Data Sheet5.811121313Revision 1.7 - June 1, 2015
BGS22WL10List of Tables12345678Ordering InformationTruth Table . . . . .Maximum Ratings .Operation Ranges .RF Input Power . . .RF Characteristics .Pin Configuration . .Mechanical Data . .Data Sheet.6.78999101112Revision 1.7 - June 1, 2015
BGS22WL10BGS22WL10 DPDT (Dual-Pole / Double-Throw) Differential RF Switch1 Features DPDT (Dual-Pole / Double-Throw) differential RF switch Frequency range: 0.1 - 3 GHz High signal power up to 30 dBm Supply voltage 2.3 - 3.6 V Small package size of 1.55 x 1.15 mm2 No decoupling capacitors required if no DC applied RoHS compliant package2 Product DescriptionThe BGS22WL10 is a DPDT (Dual-Pole / Double Throw) RF switch which combines two differential signals intoone differential output or splits one differential signal into two separate differential lines. The parallel paths of theswitch are controlled simultaneously through the same signals. The switch is designed to operate in battery poweredapplications with a supply voltage range of 2.4 - 3.6 V . The highly symmetric design ensures best phase- andamplitude accuracy.A typical application is to combine two Rx paths in a mobile cellular device after the Rx filters or duplexers into oneinput to the tranceiver IC. The IC can also be used for a wide variety of applications switching balanced signals in afrequency range of 0.1 - 3 GHz. The RF switch is packaged in a standard RoHS compliant TSLP-10-1 package witha small outline of only 1.55 x 1.15 mm2 .No decoupling capacitors are required in typical applications as long as no DC is applied to any RF port.Table 1: Ordering Data Sheet7Revision 1.7 - June 1, 2015
BGS22WL10BGS22WL10Port 2PPort 1PPort 3PPort 2NPort 1NPort 3NDPDTVDDCTRLESD ProtectionFigure 1: BGS22WL10 block diagramTable 2: Truth TablePin No.CRTLPort 1 to Port 20Port 1 to Port 31Data Sheet8Revision 1.7 - June 1, 2015
BGS22WL103 Maximum RatingsTable 3: Maximum Ratings at TA 25 C, unless otherwise specifiedParameterSymbolValuesUnitNote /Test ConditionMin.Typ.Max.Supply voltageVDD-0.5–5.5V–Control voltageVCtrl-0.3–3.6V– C–Storage temperature rangeTSTG-55–150RF input powerPIn–– 32dBm–ESD capability Human Body ModelVESD HBM1000––V– C–K/W–Junction temperatureTj––125Thermal resistance junction - soldering pointRthJS––43Attention:Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings areabsolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.4 Operation RangesTable 4: Operation RangesParameterSymbolValuesMin.Typ.Max.UnitNote / Test ConditionSupply VoltageVDD2.3–3.6V–Control Voltage LowVCtrl L-0.3–0.4V–Control Voltage HighVCtrl H1.2–VDDV–RF frequencyfRF0.1––GHz–85 –Ambient TemperatureTA-4025CTable 5: RF Input PowerParameterRF Input Power (50Ω)Data SheetSymbolPInValuesMin.Typ.Max.––309UnitNote / Test ConditiondBm–Revision 1.7 - June 1, 2015
BGS22WL105 RF CharacteristicsTable 6: RF Characteristics:Terminating port impedance: Z0 50 ΩMeasurement conditions unless otherwise specified:TA 25 C, PIN 0 dBm, Supply Voltage VDD 2.3 3.6 VParameterSymbolValuesMin.Typ.UnitNote / Test ConditionMax. Insertion Loss - Typical Conditions: TA 25 C, VDD 3 VIL0.300.340.39dB824 - 915 MHz0.370.400.46dB1710 - 1910 MHz0.430.480.59dB2170 - 2690 MHz Insertion Loss - Min/Max Conditions: TA -40 . 85 C, VDD 2.3 . 3.6 VIL0.230.270.340.400.540.58dBdB824 - 915 MHz1710 - 1910 MHz0.310.480.75dB2170 - 2690 MHz Return Loss - Min/Max Conditions: TA -40 . 85 C, VDD 2.3 . 3.6 VRL252735dB824 - 915 MHz222630dB1710 - 1910 MHz162225dB2170 - 2690 MHz323844dB824 - 915 MHz253037dB1710 - 1910 MHz222833dB2170 - 2690 MHz333435dBm1000 MHz8595dBc27 dBm, 50Ω, 25 C, 25 % duty cy-1IsolationISOP0.1 dB Compression PointP0.1dBHarmonic Generation up to 12.75 GHzAny pathPHarm80cleIntermodulation Distortion in Rx BandIMD2 Low2PIMD2 L-125-115-105dBmTx 15 dBm, Interferer -15 dBmIMD3PIMD3-125-115-110dBmTx 10 dBm, Interferer -15 dBmIMD2 HighPIMD2 H-125-115-110dBmTx 10 dBm, Interferer -15 dBmSwitching Time and Current ConsumptionRF Rise Timet10% 90%–250–ns10% - 90% of RF Signal (VDD 3 V )Ctrl to RF TimetCtrl RF–600–ns50% of Ctrl Signal to 90% of RFSignal (VDD 3 V )Supply CurrentIDD70120190µACurrent at TA 25 CPhErr0.30.50.7Deg.27 dBm, 50Ω, 25 C, 25 % duty cy-Phase ErrorBetweenanytwo pathscleNote: All electrical characteristics are measured with all RF ports terminated in 50 Ω.Isolation values are not dependent on supply voltage and temperature as long as operated in the specified operation range.2With external shunt inductor.1Data Sheet10Revision 1.7 - June 1, 2015
BGS22WL106 Package Outline and Pin Configuration22WPIN1 MarkingLaseredDate CodeYYWWTypeFigure 2: Marking Layout (top view)Table 7: Pin ort 3PDifferential Output P of Port 32GNDGround Pin3GNDGround Pin4Port 2NDifferential Output N of Port 25Port 2PDifferential Output P of Port 26CTRLControl Voltage7Port 1PDifferential Input P of Port 18Port 1NDifferential Input N of Port 19VDDSupply Voltage10Port 3NDifferential Output N of Port 3Data Sheet11Revision 1.7 - June 1, 2015
BGS22WL10Table 8: Mechanical DataParameterSymbolValueUnitPackage X-DimensionX1.55 0.05mmPackage Y-DimensionY1.15 0.05mmPackage AreaA1.783mm2Package HeightH0.39 0.01/-0.03mmTop viewBottom view0.39 0.01-0.031.15 0.050.2 0.050.05 MAX.63728190.2 0.0351)Pin 1 marking1) Dimension applies to plated terminals1.55 0.0540.2 0.0351)0.2 0.05510TSLP-10-1-PO V01Figure 3: TSLP-10-1 Package Outline (top, side and bottom view)Data Sheet12Revision 1.7 - June 1, 2015
l thickness 100 µm)Stencil aperturesSolder maskTSLP-10-1-FP V01Figure 4: Footprint TSLP-10-10.5Pin 1marking81.8541.45TSLP-10-1-TP V01Figure 5: Tape and Reel Dimensions for TSLP-10-1Data Sheet13Revision 1.7 - June 1, 2015
w w w . i n f i n e o n . c o mPublished by Infineon Technologies AG
D Port 2P Port 2N DPDT Figure 1: BGS22WL10block diagram Table 2:Truth Table Pin No. CRTL Port 1 to Port 2 0 Port 1 to Port 3 1 Data Sheet 8 Revision1.7- June 1, 2015. BGS22WL10 . solute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are
