Transcription
Transistor Circuits ICommon-Base, DC operation
The humble transistorCollector (C)Base (B)Q1Emitter (E)
Transistor basics Emitter to base junction is forward biased(normally) Collector to base junction is reverse biased(normally) Transistors are current operated devices, soKCL should be applied first:โIE IC IB
Basics continued Leakage current:ICBO (Emitter open)โ Usually is considerednegligible, but can affectthings when IC is small
Basics continued ๐ผ๐ถhFB ฮฑ (ฮฑ 1)๐ผ๐ธ๐ผ๐ถhFE ฮฒ (ฮฒ has no๐ผ๐ตdefinitive limit) The symbols hFB and hFE are BJT parameters;the h means Hybrid parameter. The subscriptFB means Forward current transfer ratio of thecommon, or grounded, Base circuit, whereasFE means Forward current transfer ratio of thecommon, or grounded, Emitter circuit.
Basic configuration of Common-Base
First circuit If VEE 20V and VEB isnegligible, find IE whenRE equals (a) 80kฮฉ, (b)40kฮฉ, (c) 20kฮฉ, (d)10kฮฉ, (e) 5kฮฉ, and (f)1kฮฉ.
Work for first circuitFormula is ๐ผ๐ธ ๐๐ธ๐ธ๐ ๐ธ 20V๐ ๐ธ20V(a) ๐ผ๐ธ 0.25mA 250ยตA;80kฮฉ20V(b) ๐ผ๐ธ 0.5mA 500ยตA;40kฮฉ20V(c) ๐ผ๐ธ 1mA;20kฮฉ20V(d) ๐ผ๐ธ 2mA;10kฮฉ20V(e) ๐ผ๐ธ 4mA;5kฮฉ20V(f) ๐ผ๐ธ 20mA1kฮฉ
Use approximation for VEBIf VEB 0.7V, rework previous values to determine IE in each instance. Formula is now ๐ผ๐ธ 19.3V 241.25ยตA;80kฮฉ19.3V(b) ๐ผ๐ธ 482.5ยตA;40kฮฉ19.3V(c) ๐ผ๐ธ 965ยตA;20kฮฉ19.3V(d) ๐ผ๐ธ 1.93mA;10kฮฉ19.3V(e) ๐ผ๐ธ 3.86mA;5kฮฉ19.3V(f) ๐ผ๐ธ 19.3mA1kฮฉ (a) ๐ผ๐ธ ๐๐ธ๐ธ ๐๐ธ๐ต๐ ๐ธ 20V 0.7V๐ ๐ธ 19.3V๐ ๐ธ
Proving the point(Measuring (a))
Measuring (b)
Measuring (c)
Measuring (d)
Measuring (e)
Measuring (f)
PNP versions
Second circuit18V10kฮฉ-22V If RE 10kฮฉ and VEB 0V, what are the valuesof IE, IC and VCB when RCequals (a) 5kฮฉ, (b) 8kฮฉ,(c) 10kฮฉ, (d) 12kฮฉ.Assume hFB ฮฑ 1.
Points to ponder Since IE will remain constant, use the valuefound from calculating through the derivation๐๐ธ๐ธ18Vof Ohmโs Law: ๐ผ๐ธ 1.8mA.๐ ๐ธ10kฮฉAdditionally, we are treating ฮฑ as 1, which๐ผ๐ถmeans using the formula 1 translates into๐ผ๐ธIE and IC being equal. Therefore, the value of ICfor all changes of RC remains a constant 1.8mA(so long as saturation is avoided )
Additional points Following KVL, VCC VRC VCB. Since VRC ICRC(Ohmโs Law), substituting this into the originalformula gives us VCC ICRC VCB. Reworkingthe equation to solve for VCB yields VCB VCC โICRC (You can use the absolute value for VCCwhen calculating, but remember to includepolarity when writing the final answer).
Work through for circuit (a) ๐๐ถ๐ต ๐๐ถ๐ถ ๐ผ๐ถ ๐ ๐ถ 22 1.8mA 5kฮฉ 22 9 13V (Remember the polarity of VCC isnegative ) (b) ๐๐ถ๐ต ๐๐ถ๐ถ ๐ผ๐ถ ๐ ๐ถ 22 1.8mA 8kฮฉ 22 14.4 7.6V (c) ๐๐ถ๐ต ๐๐ถ๐ถ ๐ผ๐ถ ๐ ๐ถ 22 1.8mA 10kฮฉ 22 18 4V (d) ๐๐ถ๐ต ๐๐ถ๐ถ ๐ผ๐ถ ๐ ๐ถ 22 1.8mA 12kฮฉ 22 21.6 0.4V
Third circuit If VCC 24V, find (a) thesaturation current,IC(sat). If VEB 0.7V, whatare the values of IE, IC,and VCB when RE equals(b) 20kฮฉ, (c) 10kฮฉ, and(d) 5kฮฉ. Assume ฮฑDC 1.
IC(sat) and some constants in ourcalculations (a) ๐ผ๐ถ(๐ ๐๐ก) ๐๐ถ๐ถ๐ ๐ถ 24V5kฮฉ 3mA VRE VEE โ VEB 20 โ 0.7 19.3V (technicallythis should be written as -19.3V since VEE isnegative in polarity)
Calculating the rest (b) ๐ผ๐ธ ๐๐ ๐ธ๐ ๐ธ 19.3V20kฮฉ 965ยตA ๐ผ๐ถ 965ยตA;VCB VCC โ ICRC 24 โ (965ยตA)(8kฮฉ) 24 โ7.72 16.28V
And the beat goes on (c) ๐ผ๐ธ ๐๐ ๐ธ๐ ๐ธ 19.3V10kฮฉ 1.93mA ๐ผ๐ถ 1.93mA; VCB VCC โ ICRC 24 โ (1.93mA)(8kฮฉ) 24 โ 15.44 8.56V
And on (d) ๐ผ๐ธ ๐๐ ๐ธ๐ ๐ธ 19.3V5kฮฉ 3.86mA ๐ผ๐ถ 3mA (this cannot be exceeded); VCB VCC โICRC 24 โ (3mA)(8kฮฉ) 24 โ 24 0V
Measure to make sure (a)
(b)
(c)
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Transistor basics Emitter to base junction is forward biased (normally) Collector to base junction is reverse biased (normally) Transistors are current operated devices, so KCL should be applied first: โI File Size: 1MBPage Count: 30