WIXLIB

406NORMALIZEDDRAIN TO SOURCE ON-RESISTANCEID, DRAIN CURRENT (A)VGS 10 V30VGS 4.5 VVGS 4 V20VGS 3.5 V1000.0PULSE DURATION 80 μsDUTY CYCLE 0.5% MAXVGS 3 V0.51.01.52.02.5PULSE DURATION 80 μsDUTY CYCLE 0.5% MAX5VGS 3 V4VGS 3.5 V3VGS 4 V21VGS 10 V03.0010VDS, DRAIN TO SOURCE VOLTAGE (V)4060ID 9 AVGS 10 VrDS(on), DRAIN TO1.41.21.00.80.6-75-50-250255075SOURCE ON-RESISTANCE (mΩ)NORMALIZEDDRAIN TO SOURCE ON-RESISTANCE30Figure 14. Normalized on-Resistance vs DrainCurrent and Gate Voltage1.6PULSE DURATION 80 μsDUTY CYCLE 0.5% MAX50ID 9 A403020TJ 125 oC10TJ 25 oC0100 125 1502TJ, JUNCTION TEMPERATURE (oC)46810VGS, GATE TO SOURCE VOLTAGE (V)Figure 16. On-Resistance vs Gate toSource VoltageFigure 15. Normalized On-Resistancevs Junction Temperature40IS, REVERSE DRAIN CURRENT (A)40PULSE DURATION 80 μsDUTY CYCLE 0.5% MAXID, DRAIN CURRENT (A)20ID, DRAIN CURRENT (A)Figure 13. On-Region Characteristics30VDS 5 V20TJ 150 oCTJ 25 oC10TJ -55 oC01.52.02.53.03.5TJ 150 oC1TJ 25 oC0.10.01TJ -55 oC0.20.40.60.81.01.2VSD, BODY DIODE FORWARD VOLTAGE (V)Figure 18. Source to Drain DiodeForward Voltage vs Source CurrentFigure 17. Transfer Characteristics 2009 Fairchild Semiconductor CorporationFDMC8200 Rev.A2VGS 0 V100.0010.04.0VGS, GATE TO SOURCE VOLTAGE (V)Downloaded from Arrow.com.VGS 4.5 V7www.fairchildsemi.comFDMC8200 Dual N-Channel PowerTrench MOSFETTypical Characteristics (Q2 N-Channel) TJ 25 C unless otherwise noted

2000CissID 9 A10008VDD 15 VCAPACITANCE (pF)VGS, GATE TO SOURCE VOLTAGE (V)106VDD 10 VVDD 20 V4Coss100Crss2f 1 MHzVGS 0 V003691215100.11811030VDS, DRAIN TO SOURCE VOLTAGE (V)Qg, GATE CHARGE (nC)Figure 19. Gate Charge CharacteristicsFigure 20. Capacitance vs Drainto Source Voltage10050oRθJC 4 C/W100 us10ID, DRAIN CURRENT (A)I D , DRAIN CURRENT (A)VGS 10 V1 ms1THIS AREA ISLIMITED BY r DS(on)10 ms100 msSINGLE PULSETJ MAX RATED0.11sRθJA 145 oC/W10 sDCTA 25 oC0.010.010.11104030VGS 4.5 V2010025100200Limited by Package5075100125150oTc, CASE TEMPERATURE ( C)VDS, DRAIN to SOURCE VOLTAGE (V)Figure 21. Forward Bias SafeOperating AreaFigure 22. Maximum Continuous DrainCurrent vs Case TemperatureP(PK), PEAK TRANSIENT POWER (W)1000VGS 10 VSINGLE PULSEoRθJA 145 C/WoTA 25 C1001010.5-410-310-210-1101101001000t, PULSE WIDTH (s)Figure 22. Single Pulse Maximum Power Dissipation 2009 Fairchild Semiconductor CorporationFDMC8200 Rev.A2Downloaded from Arrow.com.8www.fairchildsemi.comFDMC8200 Dual N-Channel PowerTrench MOSFETTypical Characteristics (Q2 N-Channel) TJ 25 C unless otherwise noted

2NORMALIZED THERMALIMPEDANCE, ZθJA10.1DUTY CYCLE-DESCENDING ORDERD 0.50.20.10.050.020.01PDMt1t20.01NOTES:DUTY FACTOR: D t1/t2PEAK TJ PDM x ZθJA x RθJA TASINGLE PULSEoRθJA 145 C/W0.001-410-310-210-1101101001000t, RECTANGULAR PULSE DURATION (sec)Figure 23. Junction-to-Ambient Transient Thermal Response Curve 2009 Fairchild Semiconductor CorporationFDMC8200 Rev.A2Downloaded from Arrow.com.9www.fairchildsemi.comFDMC8200 Dual N-Channel PowerTrench MOSFETTypical Characteristics (Q2 N-Channel) TJ 25 C unless otherwise noted

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