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Hyperfast Diode30 A, 1200 VRHRG30120DescriptionThe RHRG30120 is a hyperfast diode with soft recoverycharacteristics. It has the half recovery time of ultrafast diodes and issilicon nitride passivated ionimplanted epitaxial planar construction.These devices are intended to be used as freewheeling/clampingdiodes and diodes in a variety of switching power supplies and otherpower switching applications. Their low stored charge and hyperfastsoft recovery minimize ringing and electrical noise in many powerswitching circuits reducing power loss in the switching transistors.www.onsemi.comCATHODE(BOTTOMSIDE METAL)CATHODEANODEFeatures TO 2472 LEADCASE 340CLHyperfast Recovery trr 85 ns (@ IF 30 A)Max Forward Voltage, VF 3.2 V (@ TC 25 C)1200 V Reverse Voltage and High ReliabilityAvalanche Energy RatedThis Device is Pb Free and is RoHS CompliantMARKING DIAGRAMApplications Switching Power Supplies Power Switching Circuits General Purpose Y&Z&3&KRHRG30120ABSOLUTE MAXIMUM RATINGS (TC 25 C unless otherwise noted)RatingSymbolValueUnitPeak Repetitive Reverse VoltageVRRM1200VWorking Peak Reverse VoltageVRWM1200VVR1200VAverage Rectified Forward Current(TC 80 C)IF(AV)30ARepetitive Peak Surge Current(Square Wave, 20 kHz)IFRM60ANonrepetitive Peak Surge Current(Halfwave, 1 Phase, 60 Hz)IFSM300APD125WEAVL30mJTSTG, TJ 65 to 175 CDC Blocking VoltageMaximum Power DissipationAvalanche Energy(See Figures 7 and 8)Operating and Storage Temperature Y&Z&3&KRHRG30120 ON Semiconductor Logo Assembly Plant Code Numeric Date Code Lot Code Specific Device CodeKStresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.AORDERING INFORMATIONSee detailed ordering and shipping information on page 2 ofthis data sheet. Semiconductor Components Industries, LLC, 2001December, 2020 Rev. 31Publication Order Number:RHRG30120/D
RHRG30120PACKAGE MARKING AND ORDERING INFORMATIONDeviceDevice MarkingPackageShippingRHRG30120RHRG30120TO 247 2L450/TubeELECTRICAL CHARACTERISTICS (TC 25 C unless otherwise noted)SymbolVFIRtrrParameterTest ConditionsMinTypMaxUnitInstantaneous Forward Voltage(Pulse Width 300 ms, Duty Cycle 2%)IF 30 A3.2VIF 30 A,TC 150 C2.6VInstantaneous Reverse CurrentVR 1200 V250mAVR 1200 VTC 150 C1mAIF 1 A,diF/dt 100 A/ms65nsIF 30 A,diF/dt 100 A/ms85nsReverse Recovery Time (See Figure 6)Summation of ta tbtaTime to Reach Peak Reverse Current (See Figure 6)IF 30 A,diF/dt 100 A/ms48nstbTime from Peak IRM to Projected Zero Crossing of IRMBased on a Straight Line from Peak IRM Through 25%of IRM (See Figure 6)IF 30 A,diF/dt 100 A/ms22nsRqJCThermal Resistance Junction to Case1.2 C/WProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.www.onsemi.com2
RHRG30120200500100100175oCIR, Reverse Current (mA)IF, Forward Current (A)TYPICAL PERFORMANCE 1.00.125oC0.010.0014.5175oC0200VF, Forward Voltage (V)IF(AV), Average Forward Current (A)t, Time (ns)75Trr0tatb11080010001200Figure 2. Reverse Current vs. Reverse Voltage10025600VR, Reverse Voltage (V)Figure 1. Forward Current vs. Forward Voltage504004030DC2010030SQ.WAVEVF, Forward Current (A)255075100125TC, Case Temperature (5C)Figure 3. Trr, ta and tb Curves vs. Forward CurrentFigure 4. Current Derating Curvewww.onsemi.com3150175
RHRG30120TEST CIRCUITS AND WAVEFORMSVGE AMPLITUDE ANDRG CONTROL dlF/dtt1 AND t2 CONTROL IFLDUTRGCURRENTSENSEVGEdIFTrrdtta0VDD IGBTt1IF tb0.25I RMIRMt2Figure 5. Trr Test CircuitFigure 6. Trr Waveforms and DefinitionsIMAX 1.225 AL 40 mHR 0.1 WEAVL 1/2LI2 [VR(AVL)/(VR(AVL) VDD)]Q1 IGBT (BVCES DUT VR(AVL))LVAVLRCURRENTSENSE VDDDUT ILILIVQ1VDDt0Figure 7. Avalanche Energy Test Circuitt1t2tFigure 8. Avalanche Current and Voltage Waveformswww.onsemi.com4
MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSTO 247 2LDCASE 340CLISSUE ADATE 03 DEC 2019GENERICMARKING DIAGRAM*AYWWZZXXXXXXXXXXXXXXXXXXAYWWZZ Specific Device Code Assembly Location Year Work Week Assembly Lot Code*This information is generic. Please refer todevice data sheet for actual part marking.Pb Free indicator, “G” or microdot “G”, mayor may not be present. Some products maynot follow the Generic Marking.DOCUMENT NUMBER:DESCRIPTION:98AON13850GTO 247 2LDElectronic versions are uncontrolled except when accessed directly from the Document Repository.Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.PAGE 1 OF 1ON Semiconductor andare trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others. Semiconductor Components Industries, LLC, 2018www.onsemi.com
onsemi,, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliatesand/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent Marking.pdf. onsemi reserves the right to make changes at any time to anyproducts or information herein, without notice. The information herein is provided “as is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of theinformation, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or useof any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its productsand applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications informationprovided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance mayvary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any licenseunder any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systemsor any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. ShouldBuyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or deathassociated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an EqualOpportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.PUBLICATION ORDERING INFORMATIONLITERATURE FULFILLMENT:Email Requests to: orderlit@onsemi.comonsemi Website: www.onsemi.com TECHNICAL SUPPORTNorth American Technical Support:Voice Mail: 1 800 282 9855 Toll Free USA/CanadaPhone: 011 421 33 790 2910Europe, Middle East and Africa Technical Support:Phone: 00421 33 790 2910For additional information, please contact your local Sales Representative
It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Created Date: 12/7/2020 10:03:12 AM
