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Quo Vadis LaserDr. Eckhard MeinersGeneral ManagerTRUMPF Laser Marking Systems AGBuchs, December 2nd 2010Swiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.2010
SalesStages of the Product Life Cycle(Qualitative Estimation)CW LasersUltra Short Pulse LasersR&DSwiss Laser Net, Buchs 2010 TRUMPFIntroductionGrowthMaturityEckhard Meiners - 02.12.2010SaturationDecline Stage2
Stages of the Product Life Cycle(Qualitative Estimation)SalesCO2 LasersDisk LasersFiber LasersLamp-pumpedSSLDiode LasersR&DSwiss Laser Net, Buchs 2010 TRUMPFIntroductionGrowthMaturityEckhard Meiners - 02.12.2010SaturationDecline Stage3
TRUMPF Business Unit Laser TechnologyMachine Tools/Power ToolsLaser TechnologyTRUMPF Laser- undTRUMPF LaserTRUMPF LaserSystemtechnikGmbH Co. KG,Marking Systems AG,GmbH, DitzingenSchrambergGrüsch, CHSwiss Laser Net, Buchs 2010 TRUMPFMedical SystemsElectronicsTRUMPF Photonics,SPI Lasers,Princeton, USASouthampton, UKEckhard Meiners - 02.12.20104
CW Laser Concepts in Material t are the drivers for abroadening or theconvergence of thetechnology portfolio?FiberDiode2000Swiss Laser Net, Buchs 2010 TRUMPF2010Eckhard Meiners - 02.12.20102020 5
Drivers of the Technology Portfolio1. Specialization of laser usage in the manufacturing world: Applications drive special needs for beam characteristics.- Brightness- Wavelength- Power- Pulse width and pulse shape2. Invest and TCO: Cost is paramount, however, a more differentiated approach is needed.Application-specific models will succeed.- Invest- Energy consumption- Process efficiency and process cost (i.e. cutting gas consumption)- MaintenanceSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.20106
Example: Cost and Complexity of 4kW cw SystemPower SupplyPumpBeam ShapingBeam sklow brightnessdiode barsresonatorFiberhigh brightnessdiodesresonatorDiodehigh brightnessdiodespassive systemCost and performance of diodes will substantially impact system cost performance.Competition of concepts will lead to specialized systems for individual power andbrightness levels.Swiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.20107
Example of Specialization at the Customer: CuttingThin sheet metalcutting with SSL:TruLaser 5030Thick sheet metalcutting with CO2-laser:TruLaser 3030Swiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.20108
Future Topic (1): High Power Ultrafast Lasers Ultrafast lasers will become the newworkhorse:- Kilowatt-class ultrafast lasers forindustrial production- Modulation of pulse width and duration- Modulation of brightness Application fields:- Mass production of lightweight structures- Substitution of less energy efficientprocesses- Enhancement of existing andestablished (laser) processesSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.20109
Solar Cell Production: P1 Sribing of CI(G)S modulesSchmelzePatterning of Molybdenumns Burr free Melt freeRisse No Delamination Isolation (P1)psSpot diameter: 40 – 50 µmFeed Rate: 6 – 8 m/sSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201010
50TruMicro535050 W30 W 15 W1030 nm515 nmIntensity (a.u.)Laser Specifications – Demands343 nm-50Pulsdauer 10 ps 10 ps 10 psMax.Pulsenergie250 µJ125 µJ 75 µJPulsfrequenz200-800 kHz200-800 kHz200-800kHzStrahlqualitätM ² 1.3M² 1.3M² 1.3Swiss Laser Net, Buchs 2010 TRUMPF1028 1030 1032 1034Wavelength (nm)-40Eckhard Meiners - 02.12.2010-30-20-1001020Delay (ps)11
Products – Patterning CI(G)STruMicro 5050TruMicro 5250TruMicro 535050 W30 W 15 WWavelength1030 nm515 nm343 nmPulse length 10 ps 10 ps 10 psMax. Pulse energy250 µJ125 µJ 75 µJ200-800 kHz200-800 kHz200-800 kHzM ² 1.3M² 1.3M² 1.3Average PowerRep. rateBeam qualitySwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201012
Future Topic (2): CO2- Lasers for EUV Generation45 nm800 nmMin. Struktur λ :ArF – Excimer 193 nm(F2 – Excimer 157 nm)1,5 µmZukunft: EUV: 13.5 nmSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201013
Laser Produced Plasma EUV Source ArchitectureThree major subsystems: Laser, BTS and Source VesselDroplet GeneratorMetrologyIF ProtectionisolatorBTSisolatorMulti-StageCO2 Laser(in sub-fab)Beam Transportand FocusingSystem(through the fabfloor)Swiss Laser Net, Buchs 2010 TRUMPF.CollectorDroplet CatcherEUV Source Vacuum Vessel(inside the scanner)Eckhard Meiners - 02.12.201014
EUV-SystemIllumination OpticsReflection Type MaskAmplifyerAmplifierAmplifierAmplifyerSn nozzleProjection OpticsSeed-LaserSeed-LaserE UVEUVCollection OpticLaser Produced Plasma SourceSwiss Laser Net, Buchs 2010 TRUMPFWafer StageEckhard Meiners - 02.12.201015
CO2 Laser setup: 3 * TLF 15.000 (15.000W)Swiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201016
CO2 Laser setup: picture, made in productionSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201017
Cymer’s LPP Source for ASML NXE 3100 Scanner0.5 MW Electricity 50kHz Rep Rate500 ns pulses0.4 J Energy 30um tin droplets 100W EUV Power 2 W EUV at workpieceSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201018
Ich freue mich auf Ihre FragenSwiss Laser Net, Buchs 2010 TRUMPFEckhard Meiners - 02.12.201019
Swiss Laser Net, Buchs 2010 TRUMPF Eckhard Meiners - 02.12.2010 Quo Vadis Laser Dr. Eckhard Meiners General Manager TRUMPF Laser Marking Systems AG
