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FGD3040G2-F085VEcoSPARK 2 Ignition IGBT300 mJ, 400 V, N Channel Ignition IGBTFeatures SCIS Energy 300 mJ at TJ 25 CLogic Level Gate DriveAEC Q101 Qualified and PPAP CapableRoHS Compliantwww.onsemi.comCOLLECTORApplications Automotive Ignition Coil Driver Circuits Coil on Plug ApplicationR2MAXIMUM RATINGS (TJ 25 C unless otherwise stated)ParameterSymbolValueUnitsBVCERCollector to Emitter BreakdownVoltage (IC 1 mA)400VBVECSEmitter to Collector Voltage ReverseBattery Condition (IC 10 mA)28VESCIS25Self Clamping Inductive Switching Energy(Note 1)300mJ170mJESCIS150 Self Clamping Inductive Switching Energy(Note 2)IC25Collector Current Continuousat VGE 5.0 V, TC 25 C41AIC110Collector Current Continuousat VGE 5.0 V, TC 110 C25.6AVGEMGate to Emitter Voltage Continuous 10V150W1W/ COperating Junction and StorageTemperature 55 to 175 CTSTGStorage Junction Temperature Range 55 to 175 CTLMax. Lead Temperature for Soldering(Package Body for 10 s)300 CTPKGMax. Lead Temperature for Soldering(Package Body for 10 s)260 CESDHBM Electrostatic Discharge Voltageat 100 pF, 1500 W4kVCDM Electrostatic Discharge Voltageat 1 W2PDPower Dissipation Total, TC 25 CPower Dissipation Derating, TC 25 CTJR1GATEkVEMITTER41 23DPAK (SINGLE GAUGE)CASE 369CMARKING DIAGRAMAYWWFGD3040G2A Assembly LocationY YearWW Work WeekFGD3040G2 Device CodeORDERING INFORMATIONSee detailed ordering and shipping information on page 2of this data sheet.Stresses exceeding those listed in the Maximum Ratings table may damage thedevice. If any of these limits are exceeded, device functionality should not beassumed, damage may occur and reliability may be affected.1. Self clamped inductive Switching Energy (ESCIS25) of 300 mJ is based onthe test conditions that is starting TJ 25 C, L 3 mHy, ISCIS 14.2 A,VCC 100 V during inductor charging and VCC 0 V during time in clamp.2. Self Clamped inductive Switching Energy (ESCIS150) of 170 mJ is based onthe test conditions that is starting TJ 150 C, L 3mHy, ISCIS 10.8 A,VCC 100 V during inductor charging and VCC 0 V during time in clamp. Semiconductor Components Industries, LLC, 2019August, 2019 Rev. 21Publication Order Number:FGD3040G2 F085V/D
FGD3040G2 F085VTHERMAL RESISTANCE RATINGSCharacteristicJunction to Case – Steady State (Drain)SymbolMaxUnitsRqJC1 C/WELECTRICAL CHARACTERISTICS (TJ 25 C unless otherwise specified)ParameterSymbolTest ConditionsMinTyp.Max.UnitsOFF CHARACTERISTICSBVCERCollector to Emitter Breakdown VoltageICE 2 mA, VGE 0 V,RGE 1 kW, TJ 40 to 150 C370400430VBVCESCollector to Emitter Breakdown VoltageICE 10 mA, VGE 0 V,RGE 0, TJ 40 to 150 C390420450VBVECSEmitter to Collector Breakdown VoltageICE 20 mA, VGE 0 V,TJ 25 C28 VBVGESGate to Emitter Breakdown VoltageIGES 2 mA 12 14 VICERCollector to Emitter Leakage CurrentVCE 250 VRGE 1 kWTJ 25 C 25mATJ 150 C 1mAVEC 24 VTJ 25 C 1mATJ 150 C 40 120 W10K 30KWIECSEmitter to Collector Leakage CurrentR1Series Gate ResistanceR2Gate to Emitter ResistanceON CHARACTERISTICS (Note 5)VCE(SAT)Collector to Emitter Saturation VoltageICE 6 A, VGE 4 V, TJ 25 C 1.151.25VVCE(SAT)Collector to Emitter Saturation VoltageICE 10 A, VGE 4.5 V, TJ 150 C 1.351.50VVCE(SAT)Collector to Emitter Saturation VoltageICE 15 A, VGE 4.5 V, TJ 150 C 1.681.85VSelf Clamped Inductive SwitchingL 3.0 mHy, RG 1 KW, VGE 5 V,(Note 1) 300mJ 21 nCTJ 25 C1.31.72.2VTJ 150 CESCISDYNAMIC CHARACTERISTICSQG(ON)Gate ChargeICE 10 A, VCE 12 V, VGE 5 VVGE(TH)Gate to Emitter Threshold VoltageICE 1 mAVCE VGE0.751.21.8Gate to Emitter Plateau VoltageVCE 12 V, ICE 10 A 2.8 VVCE 14 V, RL 1 W, VGE 5 V,RG 1 KW, TJ 25 C 0.94ms 1.97VCE 300 V, L 1 mH, VGE 5 V,RG 1 KW, ICE 6.5 A, TJ 25 C 4.815 2.015VGEPSWITCHING CHARACTERISTICStd(ON)RtrRtd(OFF)LtfLCurrent Turn On Delay Time ResistiveCurrent Rise Time ResistiveCurrent Turn Off Delay Time InductiveCurrent Fall Time InductiveProduct parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Productperformance may not be indicated by the Electrical Characteristics if operated under different conditions.PACKAGE MARKING AND DEVICE ORDERING INFORMATIONDevice MarkingFGD3040G2DeviceFGD3040G2 F085VPackageDPAK (Pb Free)Reel DiameterTape WidthQty†330 mm16 mm2500†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel PackagingSpecifications Brochure, BRD8011/D.www.onsemi.com2
FGD3040G2 F085VTYPICAL CHARACTERISTICSFigure 1. Self Clamped Inductive SwitchingCurrent vs. Time in ClampFigure 2. Self Clamped Inductive SwitchingCurrent vs. InductanceFigure 3. Collector to Emitter On StateVoltage vs. Junction TemperatureFigure 4. Collector to Emitter On StateVoltage vs. Junction TemperatureFigure 5. Collector to Emitter On StateVoltage vs. Collector CurrentFigure 6. Collector to Emitter On StateVoltage vs. Collector Currentwww.onsemi.com3
FGD3040G2 F085VTYPICAL CHARACTERISTICS (continued)Figure 7. Collector to Emitter On State Voltage vs.Collector CurrentFigure 8. Transfer CharacteristicsFigure 10. Gate ChargeFigure 9. DC Collector Current vs. CaseTemperatureFigure 11. Threshold Voltage vs. JunctionTemperatureFigure 12. Leakage Current vs. JunctionTemperaturewww.onsemi.com4
FGD3040G2 F085VTYPICAL CHARACTERISTICS (continued)Figure 13. Switching Time vs. Junction TemperatureFigure 14. Capacitance vs. Collector to EmitterVoltageFigure 15. Break down Voltage vs. Series ResistanceFigure 16. IGBT Normalized Transient Thermal Impedance,Junction to Casewww.onsemi.com5
FGD3040G2 F085VTYPICAL CHARACTERISTICS (continued)Figure 17. Forward Safe Operating Areawww.onsemi.com6
FGD3040G2 F085VTEST CIRCUIT AND WAVEFORMSFigure 19. tON and tOFF Switching Test CircuitFigure 18. Inductive Switching Test CircuitFigure 20. Energy Test CircuitFigure 21. Energy WaveformsECOSPARK is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.www.onsemi.com7
MECHANICAL CASE OUTLINEPACKAGE DIMENSIONSDPAK (SINGLE GAUGE)CASE 369CISSUE F41 2DATE 21 JUL 20153SCALE 1:1AEb3Bc24L3ZD1L4CA23NOTE 7b2ecSIDE VIEWb0.005 (0.13)TOP VIEWHDETAIL AMBOTTOM VIEWCZHL2GAUGEPLANECLL1DETAIL AZSEATINGPLANEBOTTOM VIEWA1ALTERNATECONSTRUCTIONSROTATED 905 CWSTYLE 1:PIN 1. BASE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 6:PIN 1. MT12. MT23. GATE4. MT2STYLE 2:PIN 1. GATE2. DRAIN3. SOURCE4. DRAINSTYLE 7:PIN 1. GATE2. COLLECTOR3. EMITTER4. COLLECTORSTYLE 3:PIN 1. ANODE2. CATHODE3. ANODE4. CATHODESTYLE 8:PIN 1. N/C2. CATHODE3. ANODE4. CATHODESTYLE 4:PIN 1. CATHODE2. ANODE3. GATE4. ANODESTYLE 9:STYLE 10:PIN 1. ANODEPIN 1. CATHODE2. CATHODE2. ANODE3. RESISTOR ADJUST3. CATHODE4. CATHODE4. ANODESOLDERING .086 0.0940.000 0.0050.025 0.0350.028 0.0450.180 0.2150.018 0.0240.018 0.0240.235 0.2450.250 0.2650.090 BSC0.370 0.4100.055 0.0700.114 REF0.020 BSC0.035 0.050 0.0400.155 .575.460.460.610.460.615.976.226.356.732.29 BSC9.40 10.411.401.782.90 REF0.51 BSC0.891.27 1.013.93 GENERICMARKING DIAGRAM*XXXXXXGALYWWAYWWXXXXXXXXGICDiscrete Device Code Assembly Location Wafer Lot Year Work Week Pb Free Package*This information is generic. Please referto device data sheet for actual partmarking.6.170.243SCALE 181.600.063STYLE 5:PIN 1. GATE2. ANODE3. CATHODE4. ANODENOTES:1. DIMENSIONING AND TOLERANCING PER ASMEY14.5M, 1994.2. CONTROLLING DIMENSION: INCHES.3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.4. DIMENSIONS D AND E DO NOT INCLUDE MOLDFLASH, PROTRUSIONS, OR BURRS. MOLDFLASH, PROTRUSIONS, OR GATE BURRS SHALLNOT EXCEED 0.006 INCHES PER SIDE.5. DIMENSIONS D AND E ARE DETERMINED AT THEOUTERMOST EXTREMES OF THE PLASTIC BODY.6. DATUMS A AND B ARE DETERMINED AT DATUMPLANE H.7. OPTIONAL MOLD FEATURE.mm Ǔǒinches*For additional information on our Pb Free strategy and solderingdetails, please download the ON Semiconductor Soldering andMounting Techniques Reference Manual, SOLDERRM/D.DOCUMENT NUMBER:DESCRIPTION:98AON10527DDPAK (SINGLE GAUGE)Electronic versions are uncontrolled except when accessed directly from the Document Repository.Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.PAGE 1 OF 1ON Semiconductor andare trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regardingthe suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specificallydisclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor therights of others. Semiconductor Components Industries, LLC, 2018www.onsemi.com
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PD Power Dissipation Total, TC 25 C 150 W Power Dissipation Derating, . VCE VGE TJ 25 C 1.3 1.7 2.2 V TJ 150 C 0.75 1.2 1.8 VGEP Gate to Emitter Plateau Voltage VCE 12 V, ICE 10 A 2.8 V . Break down Voltage vs. Series Resistance Figure 16. IGBT Normalized Transient Thermal Impedance,
