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A Business Partner of Renesas Electronics Corporation.NESG2101M05Data SheetNPN SiGe RF Transistor for Medium Output Power Amplification (125 mW)Flat-Lead 4-Pin Thin-Type Super Minimold (M05)R09DS0036EJ0300Rev. 3.00Jun 20, 2012FEATURES R The device is an ideal choice for medium output power, high-gain amplification and low distortion, low noise, highgain amplificationPO (1 dB) 21 dBm TYP. @ VCE 3.6 V, ICq 10 mA, f 2 GHzNF 0.6 dB TYP., Ga 19.0 dB TYP. @ VCE 2 V, IC 7 mA, f 1 GHzMaximum stable power gain: MSG 17.0 dB TYP. @ VCE 3 V, IC 50 mA, f 2 GHzHigh breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) 5.0 VFlat-lead 4-pin thin-type super minimold (M05) packageORDERING INFORMATIONPart NumberNESG2101M05Order NumberPackageNESG2101M05-ANESG2101M05-T1 NESG2101M05-T1-ARemarkFlat-lead 4-pin thin-typesupper minimold(M05, 2012 PKG)(Pb-Free)Supplying Form50 pcs(Non reel) 8 mm wide embossed taping3 kpcs/reel Pin 3 (Collector), Pin 4(Emitter) face the perforationside of the tapeTo order evaluation samples, please contact your nearby sales office.Unit sample quantity is 50 pcs.ABSOLUTE MAXIMUM RATINGS (TA 25 C)ParameterCollector to Base VoltageCollector to Emitter VoltageEmitter to Base VoltageCollector CurrentTotal Power DissipationJunction TemperatureStorage TemperatureNote:QuantitySymbolVCBOVCEOVEBOICPtot NoteTjTstgRatings13.05.01.5100500150 65 to 150UnitVVVmAmW C CMounted on 38 cm2 0.4 mm (t) polyimide PCBCAUTIONObserve precautions when handling because these devices are sensitive to electrostatic discharge.The mark R shows major revised points.The revised points can be easily searched by copying an " R " in the PDF file and specifying it in the "Find what:" field.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 1 of 13

A Business Partner of Renesas Electronics Corporation.NESG2101M05 R ELECTRICAL CHARACTERISTICS (TA 25 C)ParameterDC CharacteristicsCollector Cut-off CurrentEmitter Cut-off CurrentDC Current GainRF CharacteristicsGain Bandwidth ProductInsertion Power GainNoise Figure (1)SymbolMIN.TYP.MAX.UnitVCB 5 V, IE 0VEB 1 V, IC 0VCE 2 V, IC 5 mA 130 190100100260nAnA 1411.5 1713.50.9 1.2GHzdBdB 0.6 dB11.013.0 dB 19.0 dBCre Note 2MSG Note 3PO (1 dB)VCE 3 V, IC 50 mA, f 2 GHzVCE 3 V, IC 50 mA, f 2 GHzVCE 2 V, IC 10 mA, f 2 GHz,ZS ZSopt, ZL ZLoptVCE 2 V, IC 7 mA, f 1 GHz,ZS ZSopt, ZL ZLoptVCE 2 V, IC 10 mA, f 2 GHz,ZS ZSopt, ZL ZLoptVCE 2 V, IC 7 mA, f 1 GHz,ZS ZSopt, ZL ZLoptVCB 2 V, IE 0, f 1 MHzVCE 3 V, IC 50 mA, f 2 GHzVCE 3.6 V, ICq 10 mA, f 2 GHz 14.5 0.417.0210.5 pFdBdBmGLVCE 3.6 V, ICq 10 mA, f 2 GHz 15 dBICBOIEBOhFE Note 1fTS21eNFNoise Figure (2)NFAssociated Gain (1)GaAssociated Gain (2)GaReverse Transfer CapacitanceMaximum Stable Power GainGain 1 dB Compression OutputPowerLinear Gain2Test ConditionsNotes 1. Pulse measurement: PW 350 μs, Duty Cycle 2%2. Collector to base capacitance when the emitter grounded3. MSG S21S12hFE CLASSIFICATION R RankMarkinghFE ValueFB/YFBT1J130 to 260R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 2 of 13

A Business Partner of Renesas Electronics Corporation.NESG2101M05TYPICAL CHARACTERISTICS (TA 25 C, unless otherwise 468COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGECOLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE100VCE 1 VCollector Current IC .00010.40.50.60.70.80.9Base to Emitter Voltage VBE (V)COLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGECOLLECTOR CURRENT vs.BASE TO EMITTER VOLTAGE100VCE 3 V10.10.010.0010.50.60.70.80.91.0Base to Emitter Voltage VBE (V)10VCE 2 VBase to Emitter Voltage VBE (V)100.00010.40.8Collector to Base Voltage VCB (V)1100f 1 MHzAmbient Temperature TA ( C)100.00010.41.00150Collector Current IC (mA)Collector Current IC (mA)Mounted on Polyimide PCB(38 38 mm, t 0.4 mm)6000Collector Current IC (mA)REVERSE TRANSFER CAPACITANCEvs. COLLECTOR TO BASE VOLTAGEReverse Transfer Capacitance Cre (pF)Total Power Dissipation Ptot (mW)700TOTAL POWER DISSIPATIONvs. AMBIENT TEMPERATURE1.0VCE 4 V1010.10.010.0010.00010.40.50.60.70.80.91.0Base to Emitter Voltage VBE (V)Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 3 of 13

A Business Partner of Renesas Electronics Corporation.NESG2101M05COLLECTOR CURRENT vs.COLLECTOR TO EMITTER VOLTAGE100Collector Current IC (mA)9030500 μ A450 μ A400 μ A350 μ A300 μ A250 μ A200 μ A150 μ A20100 μ A8070605040100IB 50 μ A123465Collector to Emitter Voltage VCE (V)1 000110DC CURRENT GAIN vs.COLLECTOR CURRENTVCE 2 V100100.1100110100Collector Current IC (mA)Collector Current IC (mA)DC CURRENT GAIN vs.COLLECTOR CURRENTDC CURRENT GAIN vs.COLLECTOR CURRENTVCE 3 V100100.11 000DC Current Gain hFE100100.1DC Current Gain hFEVCE 1 V1 000DC Current Gain hFEDC Current Gain hFE1 000DC CURRENT GAIN vs.COLLECTOR CURRENT110100Collector Current IC (mA)VCE 4 V100100.1110100Collector Current IC (mA)Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 4 of 13

A Business Partner of Renesas Electronics Corporation.NESG2101M05Gain Bandwidth Product fT (GHz)151050120Gain Bandwidth Product fT (GHz)20VCE 1 Vf 2 GHz10VCE 2 Vf 2 GHz1510510100Collector Current IC (mA)Collector Current IC (mA)GAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENTGAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENT20VCE 3 Vf 2 GHz1510501GAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENT01100Gain Bandwidth Product fT (GHz)Gain Bandwidth Product fT (GHz)20GAIN BANDWIDTH PRODUCTvs. COLLECTOR CURRENT10100Collector Current IC (mA)VCE 4 Vf 2 GHz151050110100Collector Current IC (mA)Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 5 of 13

A Business Partner of Renesas Electronics Corporation.3530VCE 1 VIC 50 mAMSGMAG25201510 S21e 2500.140353011010030VCE 2 VIC 50 mAMSGMAG25201510 S21e 2500.1110100INSERTION POWER GAIN,MAG, MSG vs. FREQUENCYINSERTION POWER GAIN,MAG, MSG vs. FREQUENCYVCE 3 VIC 50 mAMSGMAG S21e 2500.135Frequency f (GHz)201040INSERTION POWER GAIN,MAG, MSG vs. FREQUENCYFrequency f (GHz)2515Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)40INSERTION POWER GAIN,MAG, MSG vs. FREQUENCY110100Frequency f (GHz)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)NESG2101M05403530VCE 4 VIC 50 mAMSGMAG25201510 S21e 2500.1110100Frequency f (GHz)Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 6 of 13

A Business Partner of Renesas Electronics Corporation.NESG2101M0525VCE 1 Vf 1 GHzMSGMAG2015 S21e 21050110100Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)30INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT3025VCE 2 Vf 1 GHzMAGMSG20 S21e 2151050110100Collector Current IC (mA)INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENTINSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT3025VCE 1 Vf 2 GHz20MSGMAG1510 S21e 250110100Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Collector Current IC (mA)3025VCE 2 Vf 2 GHz20MSGMAG1510 S21e 250110100Collector Current IC (mA)Collector Current IC (mA)INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENTINSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT2015 MSGVCE 1 Vf 3 GHzMAG105 S21e 20–5–10110100Collector Current IC (mA)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT2015 MSGVCE 2 Vf 3 GHzMAG10 S21e 250–5–10110100Collector Current IC (mA)Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 7 of 13

A Business Partner of Renesas Electronics Corporation.NESG2101M0525VCE 3 Vf 1 GHzMAGMSG20 S21e 2151050110100Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)30INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT3025VCE 4 Vf 1 GHzMAGMSG20 S21e 2151050110100Collector Current IC (mA)INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENTINSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT3025VCE 3 Vf 2 GHz20MSGMAG1510 S21e 250110100Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Collector Current IC (mA)3025VCE 4 Vf 2 GHz20MSGMAG1510 S21e 250110100Collector Current IC (mA)Collector Current IC (mA)INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENTINSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT2015 MSGVCE 3 Vf 3 GHzMAG102 S21e 50–5–10110100Collector Current IC (mA)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)Insertion Power Gain S21e 2 (dB)Maximum Available Power Gain MAG (dB)Maximum Stable Power Gain MSG (dB)INSERTION POWER GAIN, MAG, MSGvs. COLLECTOR CURRENT2015 MSGVCE 4 Vf 3 GHzMAG10 S21e 250–5–10110100Collector Current IC (mA)Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 8 of 13

A Business Partner of Renesas Electronics –505010Output Power Pout (dBm), Power Gain GP (dB)Input Power Pin (dBm)OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWER2520120VCE 3.6 V, f 3 GHzIcq 10 Input Power Pin (dBm)100152520120VCE 3.6 V, f 2 GHzIcq 10 10015Input Power Pin (dBm)OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWER2520120VCE 3.6 V, f 5.2 GHzIcq 10 ut Power Pin (dBm)15020Collector Current IC (mA), Collector Efficiency η C (%)GP20OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWERCollector Current IC (mA), Collector Efficiency η C (%)100Output Power Pout (dBm), Power Gain GP (dB)25120VCE 3.6 V, f 1 GHzIcq 10 mAOutput Power Pout (dBm), Power Gain GP (dB)30Collector Current IC (mA), Collector Efficiency η C (%)OUTPUT POWER, POWER GAIN,COLLECTOR CURRENT, COLLECTOREFFICIENCY vs. INPUT POWERCollector Current IC (mA), Collector Efficiency η C (%)Output Power Pout (dBm), Power Gain GP (dB)NESG2101M05Remark The graph indicates nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 9 of 13

A Business Partner of Renesas Electronics 0100NOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENTNOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENT20105NF1Noise Figure NF (dB)15Ga4Associated Gain Ga (dB)VCE 1 Vf 2 GHz1010010VCE 2 Vf 2 GHz3210105NF1010010Collector Current IC (mA)NOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENTNOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENT2015Ga21NF11010540100Collector Current IC (mA)Noise Figure NF (dB)VCE 1 Vf 3 GHzVCE 2 Vf 3 GHz20153Ga2102015GaCollector Current IC (mA)303Collector Current IC (mA)2420Collector Current IC (mA)30Ga25NF1Associated Gain Ga (dB)15VCE 2 Vf 1 GHzAssociated Gain Ga (dB)4NOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENT10105Associated Gain Ga (dB)20Noise Figure NF (dB)534Noise Figure NF (dB)Ga25Associated Gain Ga (dB)40Noise Figure NF (dB)VCE 1 Vf 1 GHzAssociated Gain Ga (dB)Noise Figure NF (dB)5NOISE FIGURE, ASSOCIATED GAINvs. COLLECTOR CURRENT0100Collector Current IC (mA)Remark The graphs indicate nominal characteristics.R09DS0036EJ0300 Rev. 3.00Jun 20, 2012Page 10 of 13