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The Past, Present, and Future ofIGBT TechnologyJohn ShenGrainger Endowed Chair ProfessorDepartment of Electrical & Computer EngineeringIllinois Institute of TechnologyChicago, USAjohnshen@ieee.orgApril 7, 2014

Outline Applications and market of power semiconductor devicesHistory of IGBT TechnologyVery high power IGBTsFuture trends of IGBT technologySummary2

Application of Power SemiconductorsSilicon limit100MPower [VA]10M1MThyristors100k10kIGBT(InsulatedGate BipolarTransistor)BJT1kMOSFET100Power IC1001k10k100kFrequency [Hz]1M10M100M3

Worldwide Market of Power Semiconductors2008 market data from iSupply 14.1B of discrete power devices in 2010 (Yano and IMS)4

Market Segments of Power Semiconductors5

Outline Applications and market of power semiconductor devicesHistory of IGBT TechnologyVery high power IGBTsFuture trends of IGBT technologySummary6

History of IGBT TechnologyMCTIGBT Power ModuleMitsubishi’sCS‐IGBTToshiba’s IEGT(or 4500V IGBT)Everyone is onPT‐IGBTToshiba solvedlatch‐up issuePT‐IGBT by GEand RCAWafer scale IGBTIGBT Press‐PackTheoreticallimit of IGBTEveryone is onthin waferField‐Stop IGBTSiC IGBTNano‐IGBT2010Trench IGBTSiemens’ NPT‐IGBT2000199019807

Design Trade-off of IGBTVCE(ON)IGBT turn-offEOFFOther factors（short circuitcapability, EMI,dynamicbreakdown, tempcoefficient, etc.）IGBT turn-on8

Improved Conductivity Modulation of IGBTCarrier DistributionPiN DiodeN ConventionalIGBTN‐P N‐P N‐P ResistiveBottleneckEnhancedIGBT9

Improved Conductivity Modulation of IGBTM. Rahimo et al. 200610

Trench Gate IGBT ConceptShen & Omura, Proceedings of the IEEE, April 200711

Thin Wafer Field Stop IGBT ConceptShen & Omura, Proceedings of the IEEE, April 200712

Evolution of 1200V Thin Wafer IGBTs2008 100 m2001128 m1999185 m1995300 mJ. Vobecky, ISPSd2008J. Vobeckt, ISPSD200813

IGBT Performance TrendSpecific RDS(ON) Vce(on)/Current Density801200V IGBT @125oC70RDS(ON) Infineon（Siemens）ONSEMI (Motorola)20STMicroelectronicsFairchild (Samsung)1001980Fuji Electric富士电机EOFF 0.1mJ/A , Vcc 600V19902000201014

Outline Applications and market of power semiconductor devicesHistory of IGBT TechnologyVery high power IGBTsFuture trends of IGBT technologySummary15

Very High Power IGBTs 3300/4500/6500V，500-5000A MV voltage source inverters（replacing GTO or IGCT)New steel mill installations（TMEC 2012）16

Applications of High Power IGBTs HVDC light FACTS MV drives (windgenerators, PV, oil &gas pumps, etc.)（Source：ABB）17

Topologies of HP-IGBT Converters Cascade H-bridgeNPC-MLCIGBT seriesconnection18

Expanding the Power Range of IGBTSilicon limit100MPower [VA]10M1MGTO100k10kIGBT(InsulatedGate BipolarTransistor)BJT1kMOSFET100Power IC1001k10k100kFrequency [Hz]1M10M100M19

Technical Barrier of HP-IGBT IGBT chip size 2cm2，current rating 150A, much more sensitiveto defects than GTO Multi-chip IGBT power modules parallel IGBT chips throughbondwires with a current and thermal capability inferior topressure pack GTOParallel IGBT chips in power modulesWafer scale thyristors20

Concept of Wafer Scale IGBTsGate SpringContact PinIGBTWaferEmitterGateCollectorLaser TrimmerGateEmitter PadCeramicCasingCollector PadIGBTZone 1CollectorEmitter 1DefectiveIGBT ZoneIsolation ofDefectiveZones withlaser trimming21

Outline Applications and market of power semiconductor devicesHistory of IGBT TechnologyVery high power IGBTsFuture trends of IGBT technologySummary22

Theoretical Limit of IGBT Performance（A. Nakagawa 2006）23

Nanoscale IGBT Structure（M. Sumitomo, 2012）24

Superjunction IGBT1200V IGBT simulation（K. Oh et al 2006）25

SiC IGBT 15000V，24 mΩ-cm2， 4H-SiC P-IGBT 12500V，5.3 mΩ-cm2， 4H-SiC N-IGBT（Cree 2012）26

Summary IGBT is the device of choice for medium powerapplications We have not reached the theoretical limit of thefundamental silicon IGBT structure yet even after 30years of amazing technology advancement! Still a lot of potential and return of investment insilicon (and BWG) power device research! Emerging opportunity to push IGBT into megawatt (1100MW) high power applications27

Multi-chip IGBT power modules parallel IGBT chips through bondwires with a current and thermal capability inferior to pressure pack GTO 20 Parallel IGBT chips in power modules Wafer scale thyristors. Concept of Wafer Scale IGBTs 21 Emitter Gate Emitter Pad Ceramic Casing Collector Collector Pad IGBT Wafer Gate Spring .