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2N2905A2N2907A SMALL SIGNAL PNP TRANSISTORSDESCRIPTIONThe 2N2905A and 2N2907A are silicon PlanarEpitaxial PNP transistors in Jedec TO-39 (for2N2905A) and in Jedec TO-18 (for 2N2907A)metal case. They are designed for high speedsaturated switching and general -39INTERNAL SCHEMATIC DIAGRAMudorPetelosbOABSOLUTE MAXIMUM RATINGSSymbolValueUnitV CBOV CEOCollector-Base Voltage (I E 0)Collector-Emitter Voltage (I B 0)-60-60VVV EBOICEmitter-Base Voltage (I C 0)Collector Current-5-0.6VAI CMCollector Peak Current (t p 5 ms)-0.8AP totTotal Dissipation at T amb 25 o Cfor 2N2905Afor 2N2907Aat T C 25 o Cfor 2N2905Afor 2N2907AStorage Temperature0.60.4WW31.8WWT stgTjParameterMax. Operating Junction TemperatureFebruary 2003-65 to 175oC175oC1/7
2N2905A/2N2907ATHERMAL DATAR thj-caseR thj-ambThermal Resistance Junction-CaseThermal Resistance /WELECTRICAL CHARACTERISTICS (Tcase 25 oC unless otherwise specified)SymbolParameterTest ConditionsMin.Typ.Max.Unit-10-10nAµA-50nA-50nAI CBOCollector Cut-offCurrent (I E 0)V CB -50 VV CB -50 VI CEXCollector Cut-offCurrent (V BE 0.5V)V CE -30 VI BEXBase Cut-off Current(V BE 0.5V)V CE -30 VCollector-BaseBreakdown Voltage(I E 0)I C -10 µA-60V (BR)CEO Collector-EmitterBreakdown Voltage(I B 0)I C -10 mArPeV-5VV (BR)CBOV (BR)EBOEmitter-BaseBreakdown Voltage(I C 0)I E -10 µAV CE(sat) Collector-EmitterSaturation VoltageI C -150 mAI C -500 mAV BE(sat) Base-EmitterSaturation Voltageh FE dorfTPetelosbOVVVI C -150 mAI C -500 mAI B -15 mAI B -50 mA-1.3-2.6VVICICICICICV CE -10V CE -10V CE -10V CE -10V CE -10)(s -0.1 mA-1 mA-10 mA-150 mA-500 mAV CE -20 VI C -50 mAEmitter-BaseCapacitanceIC 0V EB -2 VCollector-BaseCapacitanceIE 0V CB -10 Vt d Delay TimeV CC -30 VI B1 -15 mAt r Rise TimeV CC -30 VI B1 -15 mAt s t f teloudo-0.4-1.6Transition FrequencyVVVVVf 100 MHz300200MHzpF8pFI C -150 mA10nsI C -150 mA40nsStorage TimeV CC -6 VI C -150 mAI B1 -IB2 -15 mA80nsFall TimeV CC -6 VI C -150 mAI B1 -IB2 -15 mA30nst on Turn-on TimeV CC -30 VI B1 -15 mA45nst off Turn-off TimeV CC -6 VI C -150 mAI B1 -IB2 -15 mA100nssbOC CBO* Pulsed: Pulse duration 300 µs, duty cycle 1 %** See test circuitf 1MHz751001001005030C EBO2/7-60)s(ctI B -15 mAI B -50 mAtcuDC Current GainT j 150 o Cf 1MHzI C -150 mA
2N2905A/2N2907ANormalized DC Current Gain.Collector Emitter Saturation Voltage.)s(ctCollector Base and Emitter-base capacitances.udorPeSwitching Characteristics.telo)(ssbOtcudorPetelosbO3/7
2N2905A/2N2907ATest Circuit for ton, tr, td.)s(ctudorPePULSE GENERATOR :tr 2.0 msFrequency 150 HzZo 50 ΩtelosbOTO OSCILLOSCOPE :tr 5.0 nsZIN 10 MΩ)(stcuTest Circuit for toff, to, tf.dorPetelosbOPULSE GENERATOR :tr 2.0 nsFrequency 150 HzZo 50 Ω4/7TO OSCILLOSCOPE :tr 5.0 nsZIN 100 MΩ
2N2905A/2N2907ATO-18 MECHANICAL etelosbODGAIEFHBLC00160435/7
2N2905A/2N2907ATO-39 MECHANICAL 2I0.9)-Ls(tcorP0.3340.3700.047sbO0.03545o (typ.)udorPetelosIbODGAEFHBLP008B6/7
OInformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequencesof use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license isgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication aresubject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics productsare not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics – Printed in Italy – All Rights ReservedSTMicroelectronics GROUP OF COMPANIESAustralia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.http://www.st.com7/7
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
